NanoprobingTechnical

Current imaging for failure analysis

Electron-beam current-imaging techniques that localize faults before you probe.

A row of five false-colour current-contrast images labelled EBIC, EBAC, RCI, EBIRCH and EBIV, each overlaid on a grey SEM view of a semiconductor structure.

Before you land probes, current imaging tells you where to look. By scanning the electron beam and reading the current it induces or that flows through the device, you build a map of electrical activity and pinpoint the defect, turning a needle-in-a-haystack search into a targeted measurement.

The current-imaging family#

  • EBIC (Electron-Beam-Induced Current). The beam generates electron–hole pairs; junctions and depletion regions collect them, revealing p–n junctions and recombination sites.
  • EBAC (Electron-Beam Absorbed Current). Reads the current absorbed by an interconnect, mapping conductive paths and breaks without biasing the device.
  • EBIRCH (Electron-Beam-Induced Resistance Change). Localizes resistive faults and shorts by imaging beam-induced resistance changes under bias.
  • RCI (Resistive Contrast Imaging). Two contacts split the beam-injected current by resistance, exposing opens and resistive defects along a net.
  • EBIV (Electron-Beam-Induced Voltage). Maps the beam-induced voltage at a probe, a complementary view for connectivity tracing.

Why it pairs with nanoprobing#

The Prober Shuttle’s probes double as the contacts for current imaging, so a single setup handles both mapping (EBIC/EBAC/EBIRCH) and quantitative I–V probing without re-instrumenting between steps.

Deep dives#

Each technique has its own article: EBIC, EBAC, RCI, EBIRCH and EBIV.

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